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Other Activities: 2D Dichalcogenide Electronic Materials And Devices Andras Kis
École Polytechnique Fédéral de Lausanne,
Lausanne, Switzerland
22/12/2015/ at 11:00h
IF - Dvorana Mladen Paić

Zajednički kolokvij Instituta za fiziku, Instituta Ruđer Bošković i Fizičkog odsjeka PMF-a

The discovery of graphene marked the start of research in 2D electronic materials which was expanded in new directions with MoS2 and other layered semiconducting materials. They have a wide range of promising potential applications, including those in digital electronics, optoelectronics and flexible devices. Combining 2D materials in heterostructures can increase their reach even further.

In my talk, I will review our research in 2D materials beyond graphene which started with the realisation of the first transistor based on a 2D material other than graphene, a single layer of semiconducting MoS2. I will present our recent efforts in growing 2D semiconducting transition metal dichalcogenides (TMDCs), starting from epitaxial growth of MoS2 on sapphire with a high degree of control over lattice orientation. Next, I will present our recent work on electromechanical response of MoS2 and graphene. I will finish by presenting new optoelectronic devices based on the valley degree of freedom in semiconducting monolayer TMDC materials.

Related references:

  1. Radisavljevic, B., A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-Layer MoS2Transistors. Nat. Nanotech. 6, 147–150 (2011); DOI:10.1038/nnano.2010.279.
  2. Krasnozhon, D., D. Lembke, C. Nyffeler, Y. Leblebici, A. Kis. MoS2Transistors Operating at Gigahertz Frequencies. Nano Lett. 14, 5905–5911 (2014); DOI:10.1021/nl5028638.
  3. Dumcenco, D., D. Ovchinnikov, K. Marinov, P. Lazić, M. Gibertini, N. Marzari, O. L. Sanchez, Y.-C. Kung, D. Krasnozhon, M.-W. Chen, S. Bertolazzi, P. Gillet, A. Fontcuberta i Morral, A. Radenovic, A. Kis. Large-Area Epitaxial Monolayer MoS2. ACS Nano 9, 4611–4620 (2015); DOI:10.1021/acsnano.5b01281.
  4. Manzeli, S., A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and Strain-Induced Band Gap Tuning in Atomically Thin MoS2. Nano Lett. 15, 5330–5335 (2015); DOI:10.1021/acs.nanolett.5b01689.
  5. Benameur, M. M., F. Gargiulo, S. Manzeli, G. Autčs, M. Tosun, O. V. Yazyev, A. Kis. Electromechanical Oscillations in Bilayer Graphene. Nat. Commun. 6, 8582 (2015); DOI:10.1038/ncomms9582.
  6. Srivastava, A., M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, A. Imamoğlu. Valley Zeeman Effect in Elementary Optical Excitations of Monolayer WSe2. Nat. Phys. 11, 141–147 (2015); DOI:10.1038/nphys3203.

Voditelji seminara IF-a: Nataša Vujičić i Damir Starešinić


IF Ⓒ 2017